Infineon Applied sciences AG has launched the CoolSiC MOSFETs 1200 V G2 in a top-side-cooled (TSC) Q-DPAK package deal. The brand new gadgets ship optimised thermal efficiency, system effectivity and energy density. They had been particularly designed for demanding industrial purposes that require excessive efficiency and reliability, akin to electrical car chargers, photo voltaic inverters, uninterruptible energy provides, motor drives and solid-state circuit breakers.
The brand new CoolSiC 1200 V G2 expertise presents important enhancements over the earlier era, enabling as much as 25% decrease switching losses for equal RDS(on) gadgets, thereby growing system effectivity by as much as 0.1%. Utilising Infineon’s improved .XT die connect interconnection expertise, the G2 gadgets obtain greater than 15% decrease thermal resistance and an 11% discount in MOSFET temperature in comparison with G1 household merchandise. The excellent RDS(on) values, starting from 4 mΩ to 78 mΩ, together with a broad product portfolio allow designers the flexibleness to optimise system efficiency for his or her goal purposes. Moreover, the brand new expertise helps overload operation as much as a junction temperature (Tvj) of 200°C and options excessive robustness towards parasitic turn-on, guaranteeing dependable operation underneath dynamic and demanding situations.
The CoolSiC MOSFETs 1200 V G2 can be found in two Q-DPAK configurations: a single swap and a twin half-bridge. Each variants are a part of Infineon’s broader X-DPAK top-side cooling platform. With a standardised package deal peak of two.3 mm throughout all TSC variants – together with Q-DPAK and TOLT – the platform presents design flexibility and allows clients to scale and mix completely different merchandise underneath a single heatsink meeting. This design flexibility simplifies superior energy system improvement, making it simpler for purchasers to customize and scale their options.
The Q-DPAK package deal enhances thermal efficiency by enabling direct warmth dissipation from the machine’s high floor to the heatsink. This direct thermal path delivers higher warmth switch effectivity in comparison with conventional bottom-side cooled packages, enabling extra compact designs. Moreover, the Q-DPAK package deal structure design permits for minimised parasitic inductance, which is vital for increased switching speeds. This enhances system effectivity and reduces voltage overshoot threat. The small footprint of the package deal helps compact system designs, whereas its compatibility with automated meeting processes simplifies manufacturing, guaranteeing cost-efficiency and scalability.
Availability
The CoolSiC MOSFET 1200 V G2 in Q-DPAK single swap and twin half-bridge package deal variants can be found now. Additional data is accessible at www.infineon.com/coolsic-mosfet-discretes.
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